Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device
Reexamination Certificate
2007-11-27
2007-11-27
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Having diverse electrical device
C438S042000, C438S048000, C438S069000
Reexamination Certificate
active
11560455
ABSTRACT:
A solid-state imaging device is provided in which noise to an image signal is restrained and miniaturization is facilitated in a peripheral circuit formation region.A solid-state imaging device includes a pixel formation region4and a peripheral circuit formation region20formed in the same semiconductor substrate; in the peripheral circuit formation region20a first element isolation portion is formed of an element isolation layer21in which an insulation layer is buried in a semiconductor substrate10; in the pixel formation region4a second element isolation portion made of an element isolation region11formed inside the semiconductor substrate10and an element isolation layer12projecting upward from the semiconductor substrate10is formed; and a photoelectric conversion element16(14, 15) is formed extending to a position under the element isolation layer12of the second element isolation portion.
REFERENCES:
patent: 7101726 (2006-09-01), Yamamoto et al.
patent: 2006/0011952 (2006-01-01), Ohkawa
Nguyen Cuong
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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