Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-08-16
2005-08-16
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S089000, C257S434000, C257S460000, C257S462000, C438S073000, C438S075000
Reexamination Certificate
active
06930327
ABSTRACT:
There are provided a semiconductor substrate101on which solid-state imaging devices are formed, and a translucent member201provided onto a surface of the semiconductor substrate such that spaces are provided to oppose to light receiving areas of the solid-state imaging devices, wherein external connecting terminals are arranged on an opposing surface of the semiconductor substrate101to a solid-state imaging device forming surface, and the external connecting terminals are connected to the solid-state imaging devices via through-holes provided in the semiconductor substrate101.
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Hosaka Shunichi
Maeda Hiroshi
Negishi Yoshihisa
Nishida Kazuhiro
Fuji Photo Film Co. , Ltd.
Soward Ida M.
Zarabian Amir
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