Solid-state imaging device and method of manufacturing the same

Details Solid-state imaging device and method of manufacturing the same Solid-state imaging device and method of manufacturing the same

1997-03-31

2000-02-22

Ho, Tuan

Television

Camera, system and detail

Solid-state image sensor

257250, H04N 314, H01L 27148

Patent

active

060286296

ABSTRACT:
In a high density solid-state imaging device, of four charge transfer electrodes formed on a semiconductor substrate via a gate insulating film, a first electrode, a fourth electrode, and a part of a second electrode are made of a first conductive film, and a third electrode and the remaining portion of the second electrode are made of a second conductive film. In the second electrode, the first conductive film is joined to the second conductive film. An oxidation film formed by thermally oxidizing the first conductive film isolates the first electrode from the second electrode, the second electrode from the third electrode, and the third electrode from the fourth electrode. The end of the second conductive film is formed so as to locate on the oxidation film on the first conductive film.

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patent: 5313081 (1994-05-01), Yamada
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patent: 5606187 (1997-02-01), Bluzer et al.
patent: 5641700 (1997-06-01), Hawkins et al.
patent: 5731601 (1998-03-01), Shioyama et al.
patent: 5895944 (1999-04-01), Yamada

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