Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-05-22
2008-10-07
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S222000, C257S223000, C257S291000, C257S292000, C257S293000, C257S294000, C257S461000, C257S462000
Reexamination Certificate
active
07432530
ABSTRACT:
A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly above the photo-receiving portion; and a light guiding member provided in the trench and made of organic material. An empty space is formed between a side wall of the trench and a side surface of the light guiding member. The side surface of the light guiding member is curved so that a central part of the side surface along a vertical direction is closer to a center axis of the trench than both end parts of the side surface along the vertical direction.
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U.S. Appl. No. 11/778,314, filed Jul. 16, 2007, Ogawa et al.
Doi Takashi
Kitamura Toshihiko
Ogawa Masaaki
Sakai Takayuki
Yamashita Atsuko
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Soward Ida M
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