Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-04-17
2009-12-29
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S432000, C257S698000, C257SE29065
Reexamination Certificate
active
07638823
ABSTRACT:
It is an object to provide solid-state imaging device, which can easily be manufactured and has a high reliability, and a method of manufacturing the solid-state imaging device. In the present invention, a manufacturing method comprises the steps of forming a plurality of IT-CCDs on a surface of a semiconductor substrate, bonding a translucent member to the surface of the semiconductor substrate in order to have a gap opposite to each light receiving region of the IT-CCD, and isolating a bonded member obtained at the bonding step for each of the IT-CCDs.
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Hosaka Shunichi
Maeda Hiroshi
Negishi Yoshihisa
Nishida Kazuhiro
Birch & Stewart Kolasch & Birch, LLP
Fujifilm Corporation
Trinh Michael
LandOfFree
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