Solid-state imaging device and method of manufacturing...

Details Solid-state imaging device and method of manufacturing... Solid-state imaging device and method of manufacturing...

2006-09-05

2006-09-05

Tran, Thien F. (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C438S071000, C438S072000, C438S098000, C438S401000, C438S462000

Reexamination Certificate

active

07101726

ABSTRACT:
A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup region, with the insulating layer being buried around a contact layer that connects an electrode layer of a pad portion and an interconnection layer of the surface side. A method of manufacturing such a solid-state imaging device is also provided.

REFERENCES:
patent: 6872584 (2005-03-01), Nakashiba
patent: 06-283702 (1994-10-01), None

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