Solid state imaging device and method of fabricating the same

Details Solid state imaging device and method of fabricating the same Solid state imaging device and method of fabricating the same

2007-09-04

2007-09-04

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S443000, C257S291000, C257S072000, C257S059000, C257SE27131

Reexamination Certificate

active

10834013

ABSTRACT:
A method for fabricating a solid state imaging device comprising photoelectric conversion sections and charge transfer sections having single-layered charge transfer electrodes for transferring charges generated in the photoelectric conversion sections, the method including formation of the charge transfer electrodes, wherein the formation of the charge transfer electrodes comprises the steps of: forming a conductive film on a surface of a semiconductor substrate having formed thereon a gate oxide film; forming a mask pattern on the conductive film; forming interelectrode spacings in the conductive film using the mask pattern as a mask to make a patterned conductive film; and forming an insulating film to fill in the interelectrode spacings by vacuum chemical vapor deposition.

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patent: 2002/0075391 (2002-06-01), Shizukuishi
patent: 2001-352049 (2001-12-01), None

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