Solid-state imaging device and method of driving the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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Details

C257S219000, C257SE31108

Reexamination Certificate

active

07842979

ABSTRACT:
A solid-state imaging device includes an N-type semiconductor substrate, an N-type impurity region provided in the surficial portion of the N-type semiconductor substrate, a photo-electric conversion unit formed in the N-type impurity region, a charge accumulation unit formed in the N-type impurity region so as to contact with the photo-electric conversion unit, and temporarily accumulating charge generated in the photo-electric conversion unit, a charge hold region (barrier unit) formed in the N-type impurity region so as to contact with the charge accumulation unit, and allowing the charge accumulation unit to accumulate the charge, and a charge accumulating electrode provided to the charge accumulation unit. The charge accumulation unit and the charge hold region are formed to be N−-type.

REFERENCES:
patent: 7187411 (2007-03-01), Yamada
patent: 1194469 (1998-09-01), None
patent: 02-050480 (1990-02-01), None
patent: 06-236987 (1994-08-01), None
patent: 10-189937 (1998-07-01), None

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