Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2009-02-25
2010-11-30
Parker, Keneth A (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S219000, C257SE31108
Reexamination Certificate
active
07842979
ABSTRACT:
A solid-state imaging device includes an N-type semiconductor substrate, an N-type impurity region provided in the surficial portion of the N-type semiconductor substrate, a photo-electric conversion unit formed in the N-type impurity region, a charge accumulation unit formed in the N-type impurity region so as to contact with the photo-electric conversion unit, and temporarily accumulating charge generated in the photo-electric conversion unit, a charge hold region (barrier unit) formed in the N-type impurity region so as to contact with the charge accumulation unit, and allowing the charge accumulation unit to accumulate the charge, and a charge accumulating electrode provided to the charge accumulation unit. The charge accumulation unit and the charge hold region are formed to be N−-type.
REFERENCES:
patent: 7187411 (2007-03-01), Yamada
patent: 1194469 (1998-09-01), None
patent: 02-050480 (1990-02-01), None
patent: 06-236987 (1994-08-01), None
patent: 10-189937 (1998-07-01), None
Futamura Fumiaki
Kudou Hiroyoshi
Uchiya Satoshi
Yamamoto Jun-ichi
NEC Electronics Corporation
Parker Keneth A
Patton Paul E
Young & Thompson
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