Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-01-29
2008-01-29
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S414000, C257S431000
Reexamination Certificate
active
07323758
ABSTRACT:
On a light shielding film7, an anti-oxidation layer9covering at least the light shielding film7is formed. The anti-oxidation layer9is formed under a condition which does not oxidize a surface of the light shielding film7. The anti-oxidation layer9is formed of a high melting point metal compound film having a light shielding property or an insulating film having a light transmissive property. Thus, the scattering ratio of the incident light at the surface of the light shielding film7can be uniform among all the pixels, and as a result, a solid state imaging device having suppressed sensitivity non-uniformity can be realized. Since the surface of the light shielding film7is not oxidized, the thickness of the light shielding film7can be reduced. Thus, the present invention can comply with the demand for size reduction of the pixels.
REFERENCES:
patent: 5068709 (1991-11-01), Egawa et al.
patent: 2005/0048708 (2005-03-01), Yamada et al.
patent: 9-232552 (1997-09-01), None
patent: 2004-095895 (2004-03-01), None
Doi Hitoshi
Niisoe Naoto
Nishio Rieko
Ogata Hiroe
Yano Toshihiko
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Pham Long
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