Solid-state imaging device and method for manufacturing the...

Details Solid-state imaging device and method for manufacturing the... Solid-state imaging device and method for manufacturing the...

2006-08-23

2008-12-23

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S066000, C257SE21527

Reexamination Certificate

active

07468289

ABSTRACT:
A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided. The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer4is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

REFERENCES:
patent: 6617189 (2003-09-01), Lin et al.
patent: 2003-031785 (2003-01-01), None
patent: 2003-078826 (2003-03-01), None
patent: 2003-273343 (2003-09-01), None
Japanese Office Action dated Jul. 10, 2007.

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