Solid-state imaging device and method for manufacturing the...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S079000, C438S527000, C257SE31054

Reexamination Certificate

active

10705552

ABSTRACT:
Channel stop sections are formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.

REFERENCES:
patent: 5238864 (1993-08-01), Maegawa et al.
patent: 5604150 (1997-02-01), Mehrad
patent: 6268234 (2001-07-01), Yoshida
patent: 6403994 (2002-06-01), Wada
patent: 6455345 (2002-09-01), Tanabe
patent: 6455385 (2002-09-01), Alvis et al.
patent: 6521920 (2003-02-01), Abe
patent: 6599772 (2003-07-01), Abe
patent: 6765246 (2004-07-01), Inagaki
patent: 6784015 (2004-08-01), Hatano et al.
patent: 6927091 (2005-08-01), Harada
patent: 2002/0048837 (2002-04-01), Burke et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Solid-state imaging device and method for manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid-state imaging device and method for manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state imaging device and method for manufacturing the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3743746

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.