Solid state imaging device and method for manufacturing the...

Details Solid state imaging device and method for manufacturing the... Solid state imaging device and method for manufacturing the...

2011-05-10

2011-05-10

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257SE21317, C257SE27150, C438S514000, C438S057000

Reexamination Certificate

active

07939859

ABSTRACT:
A solid state imaging device includes a transfer transistor for transferring signal charges generated by photoelectric conversion to a floating diffusion layer, a reset transistor for resetting a potential of the floating diffusion layer, and an amplifying transistor for outputting a signal corresponding to the potential of the floating diffusion layer. A low concentration impurity region having an impurity concentration lower than that of the first conductivity type semiconductor region is formed in part of a surface portion of the first conductivity type semiconductor region which is located below a gate electrode of the amplifying transistor and serves as a well region of the amplifying transistor.

REFERENCES:
patent: 7075128 (2006-07-01), Okada
patent: 2005/0040446 (2005-02-01), Shinohara
patent: 2008/0105905 (2008-05-01), Kang et al.
patent: 07-122733 (1995-05-01), None
patent: 2002-151599 (2002-05-01), None

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