Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-10-23
2007-10-23
Ngo, Ngan V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S224000, C257S229000, C257S230000, C257SE27163, C257SE21617
Reexamination Certificate
active
10491520
ABSTRACT:
A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12and14) embedded under the optical sensors (4). The semiconductor substrate (6) is constructed by laminating a support substrate (16) composed of silicon, a buffer layer (18), and a thin silicon layer (20) composed of single-crystal silicon. p− regions (26) (overflow barrier) and n-type regions (28) which function as transfer paths are formed under the optical sensors (4). The first and the second transfer electrodes (12and14) are disposed between the buffer layer (18) and the n-type regions (28), and an insulating film (30) is interposed between the n-type regions (28) and the first and the second transfer electrodes (12and14). In this structure, the light-receiving area is large since the transfer electrodes are not disposed in the front region. Accordingly, the sensitivity can be ensured even when the size of the optical sensors (4) is reduced for increasing the number of pixels.
REFERENCES:
patent: 5179428 (1993-01-01), Lee
patent: 02-278768 (1990-11-01), None
patent: 05-190828 (1993-07-01), None
Depke Robert J.
Ngo Ngan V.
Rockey, Depke & Lyons LLC.
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