Solid-state imaging device and manufacturing method thereof

Details Solid-state imaging device and manufacturing method thereof Solid-state imaging device and manufacturing method thereof

2006-08-08

2006-08-08

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S125000, C257S149000, C257S186000, C257S187000, C257S222000, C257S226000, C257S291000

Reexamination Certificate

active

07087939

ABSTRACT:
There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) includes a light-receiving sensor section disposed on the surface layer portion of a substrate (21) that performs a photoelectric conversion, a charge transfer section that transfers a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at a position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between the transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.

REFERENCES:
patent: 5057448 (1991-10-01), Kuroda
patent: 5286669 (1994-02-01), Maeda et al.
patent: 5506429 (1996-04-01), Tanaka et al.
patent: 6018169 (2000-01-01), Tohyama
patent: 6188119 (2001-02-01), Ogawa et al.
patent: 6867438 (2005-03-01), Maruyama et al.

Affiliated with

Also associated with

Rating

Solid-state imaging device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid-state imaging device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state imaging device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3666553