Solid-state imaging device and manufacturing method thereof

Details Solid-state imaging device and manufacturing method thereof Solid-state imaging device and manufacturing method thereof

2007-07-16

2009-06-23

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S292000, C257S461000, C257SE31032, C257SE31054

Reexamination Certificate

active

07550792

ABSTRACT:
A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed on at least a portion of a surface of the region of the first conductivity type; a multilayer wiring layer formed on the substrate; and a layer of the second conductivity type formed directly above the region of the second conductivity type in the multilayer wiring layer, connected to the region of the second conductivity type. A concentration of impurities in the layer of the second conductivity type is lower with decreasing proximity to the region of the second conductivity type.

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U.S. Appl. No. 11/751,807, filed May 22, 2007, Atsuko Yamashita, et al.

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