Solid-state imaging device and manufacturing method therefor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S440000, C257S443000, C313S498000, C313S506000

Reexamination Certificate

active

07084472

ABSTRACT:
A solid-state imaging device includes a plurality of two-dimensionally arranged photo diodes and a plurality of microlenses having substantially hemispherical shapes which cover the respective photo diodes. The microlens has a multilayer structure including at least a transparent resin upper layer which forms at least a portion of the substantially hemispherical shape, and a colored lower layer provided on a portion of the transparent resin upper layer which is located above the photo diode, with an interface between the colored lower layer and the transparent resin upper layer having a shape conforming to a surface of the photo diode.

REFERENCES:
patent: 4667092 (1987-05-01), Ishihara
patent: 5466926 (1995-11-01), Sasano et al.
patent: 6831311 (2004-12-01), Uchida
patent: 5-48057 (1993-02-01), None
patent: 5-326902 (1993-12-01), None
patent: 6-132505 (1994-05-01), None
patent: 7-46612 (1995-02-01), None
patent: 8-211336 (1996-08-01), None
patent: 10-326885 (1998-12-01), None
patent: 11-317511 (1999-11-01), None
patent: 2000-193819 (2000-07-01), None
patent: 2001-358320 (2001-12-01), None
patent: 2002-110952 (2002-04-01), None

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