Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-08-01
2006-08-01
Williams, Joseph (Department: 2879)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S440000, C257S443000, C313S498000, C313S506000
Reexamination Certificate
active
07084472
ABSTRACT:
A solid-state imaging device includes a plurality of two-dimensionally arranged photo diodes and a plurality of microlenses having substantially hemispherical shapes which cover the respective photo diodes. The microlens has a multilayer structure including at least a transparent resin upper layer which forms at least a portion of the substantially hemispherical shape, and a colored lower layer provided on a portion of the transparent resin upper layer which is located above the photo diode, with an interface between the colored lower layer and the transparent resin upper layer having a shape conforming to a surface of the photo diode.
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Fukuyoshi Kenzo
Ishimatsu Tadashi
Kitamura Satoshi
Ogata Keisuke
Macchiarolo Peter
Toppan Printing Co. Ltd.
Williams Joseph
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