Solid-state imaging device and its manufacturing method

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257SE31127

Reexamination Certificate

active

07986019

ABSTRACT:
A solid-state imaging device includes a semiconductor substrate having a photoelectric conversion region, a first microlens provided above the semiconductor substrate, covering the photoelectric conversion region, and having a convex upper surface, for gathering external light into the photoelectric conversion region, and a second microlens provided above the first microlens and having a convex upper surface, for gathering external light into the first microlens. A flat surface is provided at a top portion of one of the first and second microlenses and immediately above the photoelectric conversion region.

REFERENCES:
patent: 2005/0161585 (2005-07-01), Nakashima et al.
patent: 2007/0090419 (2007-04-01), Lee
patent: 2009/0085137 (2009-04-01), Kuriyama
patent: 04-012568 (1992-01-01), None
patent: 06-061462 (1994-03-01), None
patent: 11-040787 (1999-02-01), None

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