Solid-state imaging device and interline transfer CCD image...

Details Solid-state imaging device and interline transfer CCD image... Solid-state imaging device and interline transfer CCD image...

2007-01-02

2007-01-02

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S221000, C257S225000, C257S239000, C257S240000, C257S241000, C257S246000, C257SE27082, C257SE27083, C257SE27150, C257SE29227

Reexamination Certificate

active

10742419

ABSTRACT:
A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.

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