Solid state imaging device and fabrication method of solid...

Details Solid state imaging device and fabrication method of solid... Solid state imaging device and fabrication method of solid...

2011-03-01

2011-03-01

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S069000

Reexamination Certificate

active

07897426

ABSTRACT:
A solid state imaging device comprises: photoelectric conversion portions on or above a substrate; and color filters on or above the respective photoelectric conversion portions. Each of the photoelectric conversion portions comprises: a lower electrode on or above the substrate; a photoelectric conversion film on or above the lower electrode; and an upper electrode on or above the photoelectric conversion film. The device further comprises: a first inorganic material film that protects each of the photoelectric conversion portions, is formed by a first method and is above the upper electrode and below the color filters; a second inorganic material film that prevents characteristic deterioration of the photoelectric conversion portion caused by the first method, is formed by a second method and is between the upper electrode and the first inorganic material film; and a polymeric material film that enhances a function of the first inorganic material film and is on or above the first inorganic material film.

REFERENCES:
patent: 7683302 (2010-03-01), Yokozawa
patent: 2004/0185596 (2004-09-01), Tanigawa
patent: 2007/0042519 (2007-02-01), Nomura et al.
patent: 2002-502120 (2002-01-01), None
patent: 01/82390 (2001-11-01), None

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