Solid-state imaging device and camera implementing the same

Details Solid-state imaging device and camera implementing the same Solid-state imaging device and camera implementing the same

2005-07-15

2010-06-15

Purvis, Sue A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE27133, C348S294000

Reexamination Certificate

active

07737520

ABSTRACT:
To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent quantum efficiency loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and it has: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, and when the thicknesses of the first and second insulation films are determined to obtain a transmittance higher than when using only the first insulation film.

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Japanese Office Action issued Jun. 16, 2009 for corresponding Japanese Application No. 2004-233760.

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