Solid state imaging device and camera comprising a device...

Details Solid state imaging device and camera comprising a device... Solid state imaging device and camera comprising a device...

2006-05-19

2010-10-19

Andújar, Leonardo (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S291000, C257S292000, C257SE27133

Reexamination Certificate

active

07816752

ABSTRACT:
In a solid state imaging device which includes a photodiode in the upper part of a silicon substrate and a MOSFET active region separated from the photodiode by a device isolation region, the width of the device isolation region is smaller in its lower part than in its upper part.

REFERENCES:
patent: 6140156 (2000-10-01), Tsai
patent: 7199411 (2007-04-01), Yoshida et al.
patent: 2004/0251481 (2004-12-01), Rhodes
patent: 2005/0139943 (2005-06-01), Kanbe
patent: 1591888 (2005-03-01), None
patent: 2004-039832 (2004-02-01), None
Claim recitation for U.S. Appl. No. 11/826,570, filed Jul. 17, 2007 and presently pending as of Mar. 16, 2009.
Chinese Office Action, w/ English translation thereof, issued in Chinese Patent Application No. CN 200610073224.0 dated Apr. 3, 2009.

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