Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-09-13
2005-09-13
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000, C257S249000, C257S448000, C257S459000, C257S754000
Reexamination Certificate
active
06943389
ABSTRACT:
A solid-state imaging device comprises an image pickup unit having unit cells including opto-electrical converter elements, said unit cells being disposed in a two-dimensional array, a selection line made of polysilicon for selectively determining the unit cells in the same row within the image pickup unit, a read-out line made of polysilicon for reading out an electric charge accumulated in the opto-electrical converter elements of the unit cells in the same row within the image pickup unit, a signal line transmitting pixel signals produced from the unit cells in the same row within the image pickup unit, a reset line made of polysilicon for discharging the unit cells in the same row within the image pickup unit down to a desired voltage level, a driver circuit located on one side of the image pickup unit for supplying drive signals to the read-out line, the selection line, and the reset line, respectively, and a read-out auxiliary wiring disposed along at least the read-out line and electrically connected to the read-out line at a plurality of junctions, the read-out auxiliary wiring being of comparatively lower electric resistivity than the read-out line.
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Egawa Yoshitaka
Miyagawa Ryohei
Yamaguchi Tetsuya
Jackson Jerome
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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