Solid-state imaging device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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Details

C257S292000, C257S249000, C257S448000, C257S459000, C257S754000

Reexamination Certificate

active

06943389

ABSTRACT:
A solid-state imaging device comprises an image pickup unit having unit cells including opto-electrical converter elements, said unit cells being disposed in a two-dimensional array, a selection line made of polysilicon for selectively determining the unit cells in the same row within the image pickup unit, a read-out line made of polysilicon for reading out an electric charge accumulated in the opto-electrical converter elements of the unit cells in the same row within the image pickup unit, a signal line transmitting pixel signals produced from the unit cells in the same row within the image pickup unit, a reset line made of polysilicon for discharging the unit cells in the same row within the image pickup unit down to a desired voltage level, a driver circuit located on one side of the image pickup unit for supplying drive signals to the read-out line, the selection line, and the reset line, respectively, and a read-out auxiliary wiring disposed along at least the read-out line and electrically connected to the read-out line at a plurality of junctions, the read-out auxiliary wiring being of comparatively lower electric resistivity than the read-out line.

REFERENCES:
patent: 5073808 (1991-12-01), Kinoshita
patent: 5255099 (1993-10-01), Orihara
patent: 5847381 (1998-12-01), Isogai
patent: 6633334 (2003-10-01), Sakurai et al.
patent: 2-5474 (1990-01-01), None
patent: 2-134992 (1990-05-01), None
patent: 3-165572 (1991-07-01), None
patent: 03-192764 (1991-08-01), None
patent: 8-288497 (1996-11-01), None
patent: 11-097662 (1999-04-01), None
patent: 2001-111022 (2001-04-01), None
patent: 2002-198505 (2002-07-01), None

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