Solid state imaging device

Television – Camera – system and detail – Solid-state image sensor

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348302, H04N 5335

Patent

active

054206340

ABSTRACT:
A solid state imaging device in which a protection film which is transparent with respect to visible light is formed on a pixel array in which a multiplicity of pixels, each of which includes at least a light receiving portion and an accumulating portion, are arranged and which has a microlens array which is composed of a multiplicity of microlenses selectively disposed on said protection film to correspond to each of the light receiving pixels and made of organic or inorganic material, the solid state imaging device being constituted in such a manner that the optical axis and the focal point of each of microlens are present in the high electric field region of the light receiving portion and the accumulating portion of each of the pixels, the high electric field region being a region in which an avalanche phenomenon takes place.

REFERENCES:
patent: 4694185 (1987-09-01), Weiss
A New MOS Image Sensor Operating in a Non-Destructive Readout Mode by Nakamura et al (1986 IEEE IEDM 86-353).

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