Solid-state imaging device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S436000, C257SE27131, C257SE31001, C250S226000

Reexamination Certificate

active

07906827

ABSTRACT:
A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount s1from the peripheral portion toward the central portion. The shift amount s1is greater than the shift amount r.

REFERENCES:
patent: 7023034 (2006-04-01), Kuriyama
patent: 7138618 (2006-11-01), Mishina et al.
patent: 7420231 (2008-09-01), Maruyama
patent: 7466002 (2008-12-01), Shaffer
patent: 2004/0159774 (2004-08-01), Mishina et al.
patent: 2006/0113460 (2006-06-01), Tay
patent: 2006/0267123 (2006-11-01), Wu
patent: 2007/0045518 (2007-03-01), Mishina et al.
patent: 2008/0173966 (2008-07-01), Lin
patent: 2008/0191296 (2008-08-01), Wang et al.

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