Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-04-26
2011-04-26
Shingleton, Michael B (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S440000
Reexamination Certificate
active
07932574
ABSTRACT:
A solid-state imaging device having a light receiving section comprised of a stack of a photoconductive layer for absorbing light in a wavelength region for red, a photoconductive layer for absorbing light in a wavelength region for green, and a photoconductive layer for absorbing light in a wavelength region for blue. A transparent electrode layer is provided preferably above each of the photoconductive layers and a translucent reflective layer for reflecting light in a desired wavelength is provided.
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Dietmar Knipp, Patrick G. Herzog, and Helmut Stiebig, Stacked Amorphous Silicon Color Sensors, IEEE Transactions on Electron Devices, vol. 49, No. 1, Jan. 2002.
Depke Robert J.
Rockey Depke & Lyons, LLC
Shingleton Michael B
Sony Corporation
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