Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

2011-03-08

2011-03-08

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S290000, C257S294000, C257S435000, C257S447000, C257S462000, C257SE27133, C257SE31073, C257SE31077, C348S294000

Reexamination Certificate

active

07902622

ABSTRACT:
A solid-state imaging device includes a photoelectric conversion section which is provided for each pixel and which converts light incident on a first surface of a substrate into signal charges, a circuit region which reads signal charges accumulated by the photoelectric conversion section, a multilayer film including an insulating film and a wiring film, the multilayer film being disposed on a second surface of the substrate opposite to the first surface, and a transmission-preventing film disposed at least between the wiring film in the multilayer film and the substrate.

REFERENCES:
patent: 6166405 (2000-12-01), Kuriyama et al.
patent: 6350127 (2002-02-01), Chiang et al.
patent: 6387767 (2002-05-01), Besser et al.
patent: 6511778 (2003-01-01), Okazaki et al.
patent: 7521737 (2009-04-01), Augusto
patent: 2003/0214595 (2003-11-01), Mabuchi
patent: 06-236986 (1994-08-01), None
patent: 2000-323695 (2000-11-01), None
patent: 2003-273343 (2003-09-01), None
patent: 2003-338615 (2003-11-01), None
Japanese Office Action issued Nov. 9, 2010 for corresponding Japanese Application No. 2004-306182.

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