Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

1992-11-23

1995-08-22

Mancuso, Joseph

Television

Camera, system and detail

Solid-state image sensor

348317, 348294, 348302, 348311, H04N 5335, H04N 314

Patent

active

054444845

ABSTRACT:
A solid-state imaging device includes a two-dimensional array of photodetectors, a TG scanner outputting a selection pulse for reading out signal charges stored in the photodetectors, an interlace circuit receiving the selection pulse from said TG scanner and converting the selection pulse to a field storage mode operation pulse or to a frame storage mode operation pulse, and an interlace switching circuit receiving the pulse from said interlace circuit and switching the array of photodetectors between the field storage mode and the frame storage mode. The switching between the frame storage mode and the field storage mode is controlled by an external control signal. Therefore, the solid-state imaging device can select an optimum interlace system according to background conditions and the brightness and size of objects imaged.

REFERENCES:
patent: 4392158 (1983-07-01), Aoki et al.
patent: 4707744 (1987-11-01), Kimata et al.
patent: 4866292 (1989-09-01), Takemoto et al.
patent: 5019911 (1991-05-01), Okino et al.
patent: 5027217 (1991-06-01), Oshio et al.
patent: 5060038 (1991-10-01), Kimata et al.
patent: 5187584 (1993-02-01), Nishiki et al.
Kimata et al., "A 512 .times.512-Element PtSi Schottky-Barrier Infrared Imaging Sensor", IEEE Journal of Solid-State Circuits, vol. SC-22, No. 6, Dec. 1987, pp. 1124-1129.

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