Solid-state imaging device

Television – Camera – system and detail – Solid-state image sensor

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Details

348311, H04N 314, H04N 5335

Patent

active

057679029

ABSTRACT:
A solid-state imaging device includes a plurality of photodiodes for generating signal charge by photoelectric conversion in response to incident light. The photodiodes are formed on a substrate in either a one-dimensional arrangement or a two-dimensional arrangement; a charge transfer section is formed on the substrate for receiving the signal charge from the photodiodes and for transferring the signal charge toward an output portion; and a charge-accumulating region is formed on the substrate for receiving the signal charge from the output portion of the charge transfer section and for accumulating the signal charge. A reset circuit for resetting a state of the charge-accumulating region in response to a reset signal includes a first MOS transistor formed on the substrate, the first MOS transistor having a source connected to the charge-accumulating region, a drain supplied with a drain voltage for removing the signal charge, and a gate for connecting the source to the drain in response to the reset signal. Finally, a voltage generation circuit includes at least a second MOS transistor formed on the same substrate, the second MOS transistor serving as a first diode between the gate and the drain of the first MOS transistor. The voltage generation circuit generates a first forward voltage of the first diode in response to the reset signal, and applies the first forward voltage between the gate and the drain of the first MOS transistor.

REFERENCES:
patent: 4974093 (1990-11-01), Murayama et al.
patent: 5122881 (1992-06-01), Nishizawa et al.
patent: 5401952 (1995-03-01), Sugawa
Japanese Laid-Open Patent Publication No. 4-360544, T. Kimura, Laid Open on Dec. 14, 1992.
Japanese Laid-Open Patent Publication No. 6-133227, H. Suzuki, Laid-Open on May 13, 1994.
Japanese Laid-Open Patent Publication No. 6-153086, E. Koyama, Laid Open on May 31, 1994.

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