Solid state imaging device

Details Solid state imaging device Solid state imaging device

1992-06-19

1994-02-15

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257221, 257223, 257224, 257229, 257232, 257233, 257240, 257243, 377 60, 377 62, 348311, 348313, H01L 2978, H01L 2714, H01L 3100

Patent

active

052869890

ABSTRACT:
A solid imaging device that minimizes the degradation in charge transfer efficiency attributable to narrow channel effect by enlarging the apparent width of the horizontal output gate outlet. Miniaturization of the floating diffusion (FD) region is not hampered despite the apparent widening of the horizontal output gate outlet. The inventive imaging device utilizes a floating diffusion amplifier as the charge detector that detects a charge signal transferred from a horizontal CCD. In this device structure, ions are implanted into the substrate surface side of the region adjacent to the FD region in the horizontal output gate in such a manner that the channel potential of the adjacent region will become appropriately deeper than that of the forward-half region next to the adjacent region.

REFERENCES:
patent: 4949183 (1990-08-01), Stevens
patent: 5103278 (1992-04-01), Miwada

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