Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

1980-02-07

1982-02-16

Edlow, Martin H.

357 31, 357 23, 357 41, H01L 2714

Patent

active

043162053

ABSTRACT:
In a solid-state imaging device having in one major surface region of a monolithic semiconductor body, photodiodes which are arrayed in two dimensions, vertical switching MOS transistors and horizontal switching MOS transistors which address the photodiodes, MOS transistors which constitute vertical and horizontal scanning circuits for turning "on" and "off" the switching MOS transistors, and MOS transistors which constitute other peripheral circuitry, the photodiodes being constructed of source regions of the vertical switching MOS transistors and the semiconductor body; a solid-state imaging device characterized in that among source and drain regions of the various MOS transistors, the source regions of the vertical switching MOS transistors are lower in the surface impurity concentration and deeper in the junction depth than the other source and drain regions.

REFERENCES:
patent: 4143389 (1979-03-01), Koike et al.
patent: 4148051 (1979-04-01), Koike et al.
patent: 4223330 (1980-09-01), Koike et al.

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