Solid-state imaging device

Television – Camera – system and detail – Solid-state image sensor

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Details

348321, 348323, H04N 314, H04N 5335

Patent

active

060315717

ABSTRACT:
A solid-state imaging device has a storage section formed on a surface portion of a semiconductor substrate to receive and store signal charges, a discharge section formed on the surface portion of the substrate at a predetermined distance from the storage section, a reset section constituted by a depletion-type MOS transistor formed between the storage section and the discharge section, and reset voltage setting means for setting a voltage of a reset pulse to be applied to the reset section. The reset voltage setting section has first and second resistive elements series-connected between one end to which a predetermined voltage is applied and the other end which is grounded. A node which connects the first resistive element to the second resistive element is connected to a reset voltage application electrode. The second resistive element consists of a depletion-type MOS transistor, and the depletion-type MOS transistor has a depletion-type impurity layer formed by the same process as that of a depletion-type impurity layer of the reset section.

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Toshiba Technical Report No. 95-0186, vol. 13-17. pp.141-142 Obata: Mar. 20, 1995.

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