Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

1979-01-22

1980-09-16

Edlow, Martin H.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 31, 357 30, 357 23, 250211J, 307311, H01L 2714, H01L 2978

Patent

active

042233305

ABSTRACT:
In a solid-state imaging device having, in one major surface region of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal-insulator-semiconductor field effect transistors which select the photoelectric conversion elements, and vertical and horizontal scanning circuits which turn the switching transistors "on" and "off," a solid-state imaging device characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are placed into a deeper cutoff state, i.e., the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator-semiconductor field effect transistors are placed at an accumulation level.

REFERENCES:
patent: 3660667 (1972-05-01), Weimer
patent: 3683193 (1972-08-01), Weimer
patent: 4148048 (1979-04-01), Takemoto
patent: 4148051 (1979-04-01), Koike
patent: 4155006 (1979-05-01), Sato
patent: 4155094 (1979-05-01), Ohba
patent: 6143389 (1979-03-01), Koike

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