Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-06-05
1996-11-19
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257221, 257229, 257233, H01L 27148, H01L 29768
Patent
active
055765629
ABSTRACT:
A solid-state imaging device that enables correction of the shading phenomenon effectively without overall sensitivity reduction. This device contains pixels arranged in an array to form an image area, photodetectors for detecting incident light to generate signal charges, and charge transfer devices for transferring the signal charges generated in the plurality of photodetectors. Each of the pixels contains one of the photodetectors and one of the charge transfer devices. The sensitivity of the photodetectors varies according to placement of the photodetectors in the image area, so that the sensitivity has a distribution that cancels nonuniformity of the incident light in the image area. The sensitivity of the photodetectors is preferably distributed concentrically with the center of the image area.
REFERENCES:
patent: 5379067 (1995-01-01), Miura
"Construction and performance of a 320 x 244-Element IR-CCD Imager with PtSi Schottky-Barrier Detectors," T. S. Villani et al., SPIE, vol. 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, 1989, pp. 9-21.
NEC Corporation
Ngo Ngan V.
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