Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-06-24
2011-10-11
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S444000, C257S446000
Reexamination Certificate
active
08035178
ABSTRACT:
A plurality of pixel portions (12) are formed on a silicon substrate (11). A photoelectric converter portion (10) constituting each of the pixel portions (12) is electrically isolated by an element isolation portion (13) comprising an insulating film formed on the silicon substrate (11). The photoelectric converter portion (10) partitioned by the element isolation portion (13) is so formed that a crystal orientation of the sides in contact with the element isolation portion (13) corresponds to a <00-1> direction. This makes it possible to reduce dark current caused by stress in the vicinity of the interface of the element isolation portion (13) and maintain high sensitivity even if the pixel portions (12) are made smaller in size.
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Furuhashi Masayuki
Katayama Takuma
Mori Mitsuyoshi
Shimada Yasuhiro
Taniguchi Kenji
McDermott Will & Emery LLP
Nguyen Cuong Q
Panasonic Corporation
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