Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-11-26
2010-12-14
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S433000, C257S434000, C257S446000, C257S774000, C257S781000, C257SE21597, C257SE23011, C257SE31124
Reexamination Certificate
active
07851880
ABSTRACT:
A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.
REFERENCES:
patent: 7180149 (2007-02-01), Yamamoto et al.
patent: 7531375 (2009-05-01), Wataya
patent: 2006/0071347 (2006-04-01), Dotta
patent: 2007/0057339 (2007-03-01), Mitsui et al.
patent: 2001-284394 (2001-10-01), None
patent: 2005-202101 (2005-07-01), None
patent: 2005-252230 (2005-09-01), None
patent: 2005-260081 (2005-09-01), None
patent: 2007-194498 (2007-08-01), None
Office Action issued on April 7, 2009, in the related Japanese Application JP 2006-323042.
The package structure of CCD WLP, SEMI Forum Japan 2005 Abstract, p. 46 (JISSO Seminar Jun. 7, 2005 SEMI Japan.
Japanese Office Action issued on Aug. 11, 2009 in connection with JP Application No. 2006-323042.
Harada Yoshimichi
Nabe Yoshihiro
Sakai Chiaki
Suzuki Masami
Takaoka Yuji
SNR Denton US LLP
Sony Corporation
Spalla David
Warren Matthew E
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