Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

2005-10-28

2009-06-23

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S431000, C257SE31001

Reexamination Certificate

active

07550814

ABSTRACT:
A solid-state imaging device including: a plurality of photosensitive cells, each having a photodiode, arranged on a semiconductor substrate (1) in a matrix; and a peripheral driving circuit that has a plurality of transistors for driving the plurality of photosensitive cells. The plurality of transistors includes a first transistor and a second transistor, the first transistor having a first diffusion layer (2) as a source or a drain where a signal potential corresponding to a signal charge generated by the photodiode is transmitted and held, and the second transistor having a second diffusion layer as a source and a drain where the signal potential is not transmitted. An edge interval (D1) between an edge of a metal silicide layer (4) formed on a surface of the first diffusion layer and an edge of a gate electrode (6) in the first transistor is larger than an edge interval between an edge of a metal silicide layer formed on a surface of the second diffusion layer and an edge of a gate electrode in the second transistor. It is possible to suppress a leakage current in the transistors in the peripheral driving circuit, and to hold picked-up image information with high accuracy.

REFERENCES:
patent: 6025620 (2000-02-01), Kimura et al.
patent: 7342269 (2008-03-01), Yuzurihara
patent: 1 075 028 (2001-02-01), None
patent: 5-326522 (1993-12-01), None
patent: 10-027907 (1998-01-01), None
patent: 11-097649 (1999-04-01), None
patent: 2001-111022 (2001-04-01), None
patent: 2001-274259 (2001-10-01), None
patent: 2002-134743 (2002-05-01), None
patent: 2002-198523 (2002-07-01), None
International Search Report from the corresponding PCT/JP2005/019913, mailed Jan. 10, 2006.
Kazuya Yonemoto, “Basics and Applications of CCD/CMOS Image Sensor”, CQ Publishing Co., Ltd., p. 175-176. (Partial English translation included), Aug. 2003.

Affiliated with

Also associated with

Rating

Solid-state imaging device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solid-state imaging device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid-state imaging device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4120421