Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

2004-07-20

2008-12-30

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31110, C257SE31121, C257SE31127, C438S069000, C438S070000, C438S078000

Reexamination Certificate

active

07470965

ABSTRACT:
In a solid-state imaging device of the present invention, light-sensitive elements54, each of which includes a light receiving section capable of receiving light, are arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate51. A plurality of detecting electrodes53are provided on the semiconductor substrate51corresponding to the light-sensitive elements54for detecting an electrical charge generated by each light-sensitive element54. A plurality of interconnections57coat the detecting electrodes53, and apply a voltage thereto. A plurality of reflecting walls62are formed in a grid pattern over the interconnection57so as to partition the light-sensitive elements54individually for reflecting a portion of light entering the semiconductor substrate51from above onto the light receiving section of each light-sensitive element54. The plurality of reflecting walls62are electrically insulated from the interconnections57.

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Chinese Office Action issued in corresponding Chinese Patent Application No. CN 2004100682153, dated Oct. 19, 2007.
Japanese Notice of Reasons for Rejection issued in Japanese Patent Application No. 2005-306388 dated on Sep. 9, 2008 no translation.

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