Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-09-27
1998-08-11
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257241, H01L 27148, H01L 29768
Patent
active
057930716
ABSTRACT:
A solid-state imaging device used as a linear sensor of the TDI mode in which resolution is improved and moire phenomenon takes place to less degree. This solid-state imaging device comprises first pixel trains comprised of plural pixels, second pixel trains comprised of plural pixels disposed in the state respectively shifted by half pitches in the horizontal and vertical directions with respect to the first pixel trains, a charge storage section for storing signal charges transferred to a signal processing section, first shift electrodes disposed between respective corresponding pixels of the first and second pixel trains and adapted for sequentially transferring signal charges, and second shift electrodes for transferring signal charges of the pixels of the final transfer stage of the first and second pixel trains to the charge transfer section through a shift register and an output circuit. Preferably, the signal processing section includes an interpolating circuit for interpolating, on the basis of one of signal outputs from the first and second pixel trains, the other signal output.
REFERENCES:
patent: 4012587 (1977-03-01), Ochi et al.
patent: 4336556 (1982-06-01), Sekine et al.
patent: 4602289 (1986-07-01), Sekine
Kabushiki Kaisha Toshiba
Ngo Ngan V.
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