Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-04-24
2008-03-18
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S351000, C257SE27100
Reexamination Certificate
active
07345308
ABSTRACT:
A solid-state imaging device includes: a photoelectric conversion element; a pixel region including a modulation part formed adjacent to the photoelectric conversion element; and a peripheral region in which a peripheral circuit including a driving circuit driving the photoelectric conversion element and the modulation part is disposed, wherein the peripheral region includes a transistor that a sidewall is formed on a side of a gate electrode; and the pixel region includes a transistor that no sidewall is formed on a side of a gate electrode.
REFERENCES:
patent: 6274887 (2001-08-01), Yamazaki et al.
patent: 2005/0082629 (2005-04-01), Murakami
patent: 2935492 (1999-07-01), None
patent: 2001-177085 (2001-06-01), None
patent: 2004-241487 (2004-08-01), None
Mizuguchi Akira
Nakamura Noriyuki
Sakano Yorito
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
Trinh (Vikki) Hoa B
Weiss Howard
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