Solid-state imaging device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S072000, C257S351000, C257SE27100

Reexamination Certificate

active

07345308

ABSTRACT:
A solid-state imaging device includes: a photoelectric conversion element; a pixel region including a modulation part formed adjacent to the photoelectric conversion element; and a peripheral region in which a peripheral circuit including a driving circuit driving the photoelectric conversion element and the modulation part is disposed, wherein the peripheral region includes a transistor that a sidewall is formed on a side of a gate electrode; and the pixel region includes a transistor that no sidewall is formed on a side of a gate electrode.

REFERENCES:
patent: 6274887 (2001-08-01), Yamazaki et al.
patent: 2005/0082629 (2005-04-01), Murakami
patent: 2935492 (1999-07-01), None
patent: 2001-177085 (2001-06-01), None
patent: 2004-241487 (2004-08-01), None

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