Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1993-02-16
1994-12-06
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257229, 257233, 257436, 377 57, 377 60, H01L 2714
Patent
active
053713974
ABSTRACT:
A solid-state imaging device includes a semiconductor substrate in which an element part including a plurality of light responsive elements for generating charge carriers in response to incident light and a transfer part for transferring the charge carriers generated in each light responsive element are incorporated; a lens layer is disposed on the element part so that incident light is collected in the light responsive elements; and a light beam dispersion layer is disposed between the lens layer and the element part and includes two light transmissive layers having different refractive indices for dispersing light collected by the lens layer so that collected light entering respective light responsive elements is closer to a parallel beam than the incident light. By suppressing broadening of incident light in the semiconductor substrate at the light responsive elements, fewer charge carriers enter the CCD channel region and smear is reduced.
REFERENCES:
patent: 4694185 (1987-09-01), Weiss
patent: 5118924 (1992-06-01), Mehra et al.
patent: 5172206 (1992-12-01), Iizuka
Ishihara et al, "A High Photosensitivity IL-CCD Image Sensor With Monolithic Resin Lens Array", IEEE, International Electron Devices Meeting, Dec. 1983, pp. 497-500.
Kawashima Hiroshi
Maegawa Shigeto
Yamamoto Hidekazu
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
Saadat Mahshid
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