Solid-state imaging apparatus and manufacturing method thereof

Details Solid-state imaging apparatus and manufacturing method thereof Solid-state imaging apparatus and manufacturing method thereof

2004-05-18

2008-09-09

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S075000

Reexamination Certificate

active

07422925

ABSTRACT:
The present invention aims to provide a solid-state apparatus and a manufacturing method thereof, the solid-state apparatus having both high transfer efficiency in a horizontal transfer CCD and efficient breakdown voltage in a vertical transfer CCD and including a semiconductor substrate110, first layer poly-silicon electrodes120and second layer poly-silicon electrodes130which form two layered overlap poly-silicon electrodes, an embedded channel region140which is formed in a surface unit of the semiconductor substrate110and becomes a transfer path for signal charge, and a photodiode region where photodiodes are aligned two-dimensionally, the photodiodes converting light into signal charge and accumulating the signal charge, wherein an inter-electrode distance c in the horizontal transfer CCD is shorter than an inter-electrode distance a in the vertical transfer CCD.

REFERENCES:
patent: 1-241863 (1989-09-01), None
patent: 7-74337 (1995-03-01), None
patent: 8-88344 (1996-04-01), None
patent: 2002-343955 (2002-11-01), None

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