Solid-state imaging apparatus and charge transfer apparatus

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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C257S233000, C257S448000, C257SE27151

Reexamination Certificate

active

07446353

ABSTRACT:
A solid-state imaging apparatus includes a photoelectric conversion section generating a charge by photoelectric conversion; and a charge transfer section having first and second transfer electrodes arranged in parallel with each other in an output direction of a charge generated by the photoelectric conversion section and repeatedly transferring the charge between a semiconductor region underneath the first transfer electrode and a semiconductor region underneath the second transfer electrode obliquely to an array direction of the first and second transfer electrodes to output the charge.

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patent: 58-137250 (1983-08-01), None
patent: 2816063 (1998-08-01), None
Sei, Hideo, et al., “A Meander Channel CCD Linear Image Sensor”, Feb. 2, 1978, IEDM, vol. ED-25,No. 2, p. 140-4.
CCD Image Sensor and Analog Signal Processor, The Transactions of The Institute of Electronics, Information and Communication Engineers, Apr. 1977, ED77-2 pp. 9-16.

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