Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-11-16
2010-10-05
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S215000, C257S222000, C257S225000
Reexamination Certificate
active
07808018
ABSTRACT:
A solid-state imaging apparatus includes a pixel array comprising a plurality of light receiving elements disposed in a charge transfer direction, the plurality of light receiving elements converting a light signal into an electric signal, a first charge transfer unit and a second charge transfer unit arranged on each side of the pixel array and transferring a signal charge input from the pixel array in the charge transfer direction, a first floating diffusion region connected to the first charge transfer unit, a second floating diffusion region connected to the second charge transfer unit, a wiring layer connecting the first floating diffusion region with the second floating diffusion region, and an output circuit connected to the wiring layer and output a signal voltage in accordance with a potential of the first floating diffusion region and the second floating diffusion region.
REFERENCES:
patent: 5286989 (1994-02-01), Yonemoto
patent: 6111279 (2000-08-01), Nakashiba
patent: 2-91954 (1990-03-01), None
patent: 7-46371 (1995-02-01), None
NEC Electronics Corporation
Nguyen Cuong Q
Young & Thompson
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