Solid-state imaging apparatus

Details Solid-state imaging apparatus Solid-state imaging apparatus

2011-04-19

2011-04-19

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S231000, C257S292000, C257S443000, C257SE27151

Reexamination Certificate

active

07928477

ABSTRACT:
A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to the fifth semiconductor region.

REFERENCES:
patent: 7462810 (2008-12-01), Kobayashi et al.
patent: 2007/0046795 (2007-03-01), Yamashita
patent: 2008/0029787 (2008-02-01), Watanabe et al.
patent: 2008/0036890 (2008-02-01), Yamashita et al.
patent: 2009/0009372 (2009-01-01), Yamashita
patent: 2009/0244328 (2009-10-01), Yamashita
patent: 2005-166731 (2005-06-01), None

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