Solid state imager with reduced smear

Details Solid state imager with reduced smear Solid state imager with reduced smear

1996-07-25

1999-07-27

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257222, 257250, 257435, H01L 27148

Patent

active

059294701

ABSTRACT:
A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).

REFERENCES:
patent: 5014132 (1991-05-01), Kumesawa et al.
patent: 5250825 (1993-10-01), Negishi et al.
patent: 5264374 (1993-11-01), Watanabe et al.
patent: 5343060 (1994-08-01), Abe
patent: 5371033 (1994-12-01), Lee et al.
patent: 5614741 (1997-03-01), Harada et al.
Patent Abstracts of Japan, vol. 017. 535 (E-1439), Sep. 27, 1993 and JP-A-05 145 855 (Sony Corp.).
Patent Abstracts of Japan, vol. 016, No. 564 (E-1295), Dec. 4, 1992 and JP-A-04 216 672 (Sony Corp.).

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