Solid-state imager with container LOD implant

Details Solid-state imager with container LOD implant Solid-state imager with container LOD implant

1997-01-08

1998-09-08

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257230, 257231, 257233, H01L 27148, H01L 29768

Patent

active

058048448

ABSTRACT:
A CCD pixel 10 has an antiblooming structure including a lateral overflow drain 36 of one conductivity. The drain 36 is mounted on one side by a heavy dope channel stop region. The rest of drain 36 is bounded by a heavily doped container region 38 that is formed in the same opening that is used to form LOD 36.

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W. F. Keenan & H. H. Hosack, "A Channel-Stop-Defined Barrier and Drain Antiblooming Structure for Virtual Phase CCD Image Sensors", IEEE Transactions On Electron Devices, vol. 36, No. 9, Sep. 1989.

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