Solid state imager including TFTS with variably doped contact la

Details Solid state imager including TFTS with variably doped contact la Solid state imager including TFTS with variably doped contact la

1998-05-15

1999-06-29

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 32, 257 72, 257213, 257343, 257347, 257350, 438 30, 438149, 438159, 438233, H01L 2904

Patent

active

059171995

ABSTRACT:
A TFT structure includes a variably doped contact layer system in order to reduce leakage current characteristics and increase mobility of the TFT. Such TFTs may be utilized in, for example, X-ray imagers or liquid crystal displays. In certain embodiments, the contact layer system is lightly doped adjacent a semiconductor or channel layer, and is more heavily doped adjacent the source/drain electrodes. The variation in doping density of the contact layer system may be performed in a step-like manner, gradually, continuously, or in any other suitable manner. In certain embodiments, the contact layer system may include a single layer which is deposited over an intrinsic semiconductor layer, with the amount of dopant gas being used during the deposition process being adjusted through the deposition of the single layer so as to cause the doping density to vary (increase or decrease) throughout the thickness of the system/layer.

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patent: 5641974 (1997-06-01), den Boer et al.
patent: 5650358 (1997-07-01), Gu et al.
patent: 5718800 (1998-02-01), Juengling

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