Solid state imager device

Details Solid state imager device Solid state imager device

1988-01-13

1989-07-25

Munson, Gene M.

357 30, 357 59, H01L 2978, H01L 2714, H01L 3100, H01L 2904

Patent

active

048518875

ABSTRACT:
A solid state imager device having a charge accumulating region of a second conductivity type formed on the surface side of a semiconductor substrate of a first conductivity type which has a charge accumulating region of the second conductivity type laminated on the charge accumulating region, the second conductivity type region and the charge accumulating region forming a charge accumulating section, and a first conductivity type region formed on the surface of and/or on the side of the second conductivity type region, wherein if an excessive signal charge is produced in the charge accumulating section, the excessive signal charge is absorbed in the first conductivity type region, whereby brooming can be satisfactorily suppressed and higher integration of the device can be achieved.

REFERENCES:
patent: 4369458 (1983-01-01), Thomas et al.
patent: 4737833 (1988-04-01), Tabei
patent: 4740824 (1988-04-01), Yano et al.
patent: 4748486 (1988-05-01), Miyatake

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