Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-04-02
1998-11-03
Saadat, Mahsid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257222, H01L 27148, H01L 29768
Patent
active
058312986
ABSTRACT:
There is disclosed a solid-state imager for preventing an unwanted potential barrier in the overflow control gate when ions are implanted into the sensor portion. The imager is capable of easily controlling the amount of overflow. The sensor portion takes the hole accumulation diode (HAD) sensor structure. A potential barrier is created in the overflow control gate by ion implantation. A potential difference created between the overflow control gate and the sensor portion is determined by the amount of ions implanted. A DC voltage V.sub.D applied to the overflow drain is variable. The potential difference is adjusted by varying the DC voltage V.sub.D. Thus, elements of the imager are uniform in potential barrier.
REFERENCES:
patent: 3896485 (1975-07-01), Early
patent: 4362574 (1982-12-01), Wallace
patent: 4362575 (1982-12-01), Wallace
patent: 4527182 (1985-07-01), Ishihara
patent: 5276520 (1994-01-01), Hawkins et al.
patent: 5621231 (1997-04-01), Kawamoto et al.
Kawamoto Seiichi
Narabu Tadakuni
Clark S. V.
Saadat Mahsid D.
Sony Corporation
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