1982-07-27
1984-07-17
Munson, Gene M.
357 30, H01L 2978, H01L 2714, H01L 3100
Patent
active
044609124
ABSTRACT:
A solid state image sensor of the interline transfer type comprises a sensing and vertical transfer portion formed on a semiconductor substrate of a first conductive type, for example, P - type, a horizontal charge transfer portion and an output portion, wherein a semiconductor layer of a second conductive type, for example, N - type with the low impurity density is provided on the semiconductor substrate and a plurality of P - type semiconductor regions with the high impurity density, each of which contains a vertical charge transfer portion for vertically transferring a signal charge therein and an overflow drain for draining off a superfluous charge, both of which are provided in the form of N - type semiconductor areas apart from each other, and a plurality of photo-sensing areas for storing the signal charge produced in response to the light from the outside formed between each adjacent two of the P - type semiconductor regions are provided on the semiconductor layer of the N - type, so that no needless charge flows into the vertical charge transfer portion to be undesirably transferred therein.
REFERENCES:
patent: 3896474 (1975-07-01), Amelio et al.
patent: 4389661 (1983-06-01), Yamada
Hamasaki Masaharu
Takeshita Kaneyoshi
Munson Gene M.
Sony Corporation
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